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US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Magnetic tunnel junction structures and related methods" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,168, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Magnetic tunnel junction structures... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Thermally enhanced selector structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,169, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Thermally enhanced selector structu... Read More


US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and method of manufacturing the semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,170, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon, South Korea). "Semiconductor device and method of manufacturing the semicond... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Three dimensional semiconductor device with memory stack" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,171, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Three dimensional semiconductor dev... Read More


US Patent Issued to SK hynix on Sept. 1 for "Semiconductor device and manufacturing method of semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,172, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon, South Korea). "Semiconductor device and manufacturing method of semiconducto... Read More


US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory device structure and fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,173, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device structure and fabrication metho... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Three-dimensional semiconductor memory device with dummy plug and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,174, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Three-dimensional semiconductor memory devic... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor package and method of manufacturing the same" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,175, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package and method of manufact... Read More


US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Three-dimensional memory devices and manufacturing methods thereof and three-dimensional memories" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,176, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional memory devices and manufact... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Package with integrated voltage regulator and method forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,177, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Package with integrated voltage reg... Read More